# Microwave Low-Noise Performance of $0.17~\mu \text{m}$ Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate

> Research article (IEEE Electron Device Letters, 2016) · cited 29× · AI/ML

**Wikidata**: [openalex:W2523280341](https://www.wikidata.org/wiki/openalex:W2523280341)  
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