# Low-Frequency Noise Investigation of GaN/AlGaN Metal–Oxide–Semiconductor High-Electron-Mobility Field-Effect Transistor With Different Gate Length and Orientation

> Research article (IEEE Transactions on Electron Devices, 2020) · cited 33× · AI/ML

**Wikidata**: [openalex:W3037510146](https://www.wikidata.org/wiki/openalex:W3037510146)  
**Source**: https://4ort.xyz/entity/low-frequency-noise-investigation-of-gan-algan-metaloxidesemiconductor-high-electron-mobility-field-effect-transistor-wi