# Low-Frequency Drain Noise Characterization and TCAD Physical Simulations of GaN HEMTs: Identification and Analysis of Physical Location of Traps

> Research article (IEEE Electron Device Letters, 2017) · cited 35× · AI/ML

**Wikidata**: [openalex:W2768056736](https://www.wikidata.org/wiki/openalex:W2768056736)  
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