# Impact of the Stacking Order of HfO<sub> <i>x</i> </sub> and AlO<sub> <i>x</i> </sub> Dielectric Films on RRAM Switching Mechanisms to Behave Digital Resistive Switching and Synaptic Characteristics

> Research article (IEEE Journal of the Electron Devices Society, 2019) · cited 46× · AI/ML

**Wikidata**: [openalex:W2944343855](https://www.wikidata.org/wiki/openalex:W2944343855)  
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