# Impact of Switching Variability of 65nm CMOS Integrated Hafnium Dioxide-based ReRAM Devices on Distinct Level Operations

> Research article (2020 IEEE International Integrated Reliability Workshop (IIRW), 2020) · cited 17× · AI/ML

**Wikidata**: [openalex:W3120309120](https://www.wikidata.org/wiki/openalex:W3120309120)  
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