# Impact of random telegraph noise on write stability in Silicon-on-Thin-BOX (SOTB) SRAM cells at low supply voltage in sub-0.4V regime

> Research article (2015 Symposium on VLSI Technology (VLSI Technology), 2015) · cited 12× · AI/ML

**Wikidata**: [openalex:W1582191726](https://www.wikidata.org/wiki/openalex:W1582191726)  
**Source**: https://4ort.xyz/entity/impact-of-random-telegraph-noise-on-write-stability-in-silicon-on-thin-box-sotb-sram-cells-at-low-supply-voltage-in-sub-