# Impact of Gate–Drain Spacing on Low-Frequency Noise Performance of <italic>In Situ</italic> SiN Passivated InAlGaN/GaN MIS-HEMTs

> Research article (IEEE Transactions on Electron Devices, 2017) · cited 20× · AI/ML

**Wikidata**: [openalex:W2619252782](https://www.wikidata.org/wiki/openalex:W2619252782)  
**Source**: https://4ort.xyz/entity/impact-of-gatedrain-spacing-on-low-frequency-noise-performance-of-lt-italic-gt-in-situ-lt-italic-gt-sin-passivated-inalg