# Impact of gate recessing on DC, RF and noise parameters of 6H-SiC-based Al0.30Ga0.70N/GaN HEMT for RF and low noise applications

> Research article (Microsystem Technologies, 2022) · cited 15× · AI/ML

**Wikidata**: [openalex:W4378741512](https://www.wikidata.org/wiki/openalex:W4378741512)  
**Source**: https://4ort.xyz/entity/impact-of-gate-recessing-on-dc-rf-and-noise-parameters-of-6h-sic-based-al0-30ga0-70n-gan-hemt-for-rf-and-low-noise-appli