# Half-Select Disturb-Free 10T Tunnel FET SRAM Cell With Improved Noise Margin and Low Power Consumption

> Research article (IEEE Transactions on Circuits & Systems II Express Briefs, 2021) · cited 15× · AI/ML

**Wikidata**: [openalex:W3126616019](https://www.wikidata.org/wiki/openalex:W3126616019)  
**Source**: https://4ort.xyz/entity/half-select-disturb-free-10t-tunnel-fet-sram-cell-with-improved-noise-margin-and-low-power-consumption