# Enhanced synaptic properties in HfO2-based trilayer memristor by using ZrO2- oxygen vacancy reservoir layer for neuromorphic computing

> Research article (Journal of Material Science and Technology, 2025) · cited 11× · AI/ML

**Wikidata**: [openalex:W4406447741](https://www.wikidata.org/wiki/openalex:W4406447741)  
**Source**: https://4ort.xyz/entity/enhanced-synaptic-properties-in-hfo2-based-trilayer-memristor-by-using-zro2-oxygen-vacancy-reservoir-layer-for-neuromorp