# Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors

> Research article (Japanese Journal of Applied Physics, 2019) · cited 15× · AI/ML

**Wikidata**: [openalex:W2991211473](https://www.wikidata.org/wiki/openalex:W2991211473)  
**Source**: https://4ort.xyz/entity/effects-of-a-dual-spacer-on-electrical-characteristics-and-random-telegraph-noise-of-gate-all-around-silicon-nanowire-p-