# Edge termination design of a 700-V triple RESURF LDMOS with n-type top layer

> Research article (2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017) · cited 16× · AI/ML

**Wikidata**: [openalex:W2737155024](https://www.wikidata.org/wiki/openalex:W2737155024)  
**Source**: https://4ort.xyz/entity/edge-termination-design-of-a-700-v-triple-resurf-ldmos-with-n-type-top-layer