# Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited)

> Research article (2017 IEEE International Electron Devices Meeting (IEDM), 2017) · cited 14× · AI/ML

**Wikidata**: [openalex:W2787366573](https://www.wikidata.org/wiki/openalex:W2787366573)  
**Source**: https://4ort.xyz/entity/characterization-of-oxide-defects-in-ingaas-mos-gate-stacks-for-high-mobility-n-channel-mosfets-invited