# Characteristics of Gate-All-Around Silicon Nanowire and Nanosheet MOSFETs with Various Spacers

> Research article (2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020) · cited 28× · AI/ML

**Wikidata**: [openalex:W3097361398](https://www.wikidata.org/wiki/openalex:W3097361398)  
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