# Carrier-Number-Fluctuation Induced Ultralow 1/<i>f</i> Noise Level in Top-Gated Graphene Field Effect Transistor

> Research article (ACS Applied Materials & Interfaces, 2017) · cited 25× · AI/ML

**Wikidata**: [openalex:W2587483964](https://www.wikidata.org/wiki/openalex:W2587483964)  
**Source**: https://4ort.xyz/entity/carrier-number-fluctuation-induced-ultralow-1-i-f-i-noise-level-in-top-gated-graphene-field-effect-transistor