# Analysis of Trap and Recovery Characteristics Based on Low-Frequency Noise for E-Mode GaN HEMTs Under Electrostatic Discharge Stress

> Research article (IEEE Journal of the Electron Devices Society, 2020) · cited 19× · AI/ML

**Wikidata**: [openalex:W3110105054](https://www.wikidata.org/wiki/openalex:W3110105054)  
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