# Analysis of false turn-on phenomenon of GaN HEMT with parasitic inductances for propose novel design method focusing on peak gate voltage

> Research article (2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2017) · cited 12× · AI/ML

**Wikidata**: [openalex:W2768708338](https://www.wikidata.org/wiki/openalex:W2768708338)  
**Source**: https://4ort.xyz/entity/analysis-of-false-turn-on-phenomenon-of-gan-hemt-with-parasitic-inductances-for-propose-novel-design-method-focusing-on-