# Analog Figures of Merit of Vertically Stacked Silicon Nanosheets nMOSFETs With Two Different Metal Gates for the Sub-7 nm Technology Node Operating at High Temperatures

> Research article (IEEE Transactions on Electron Devices, 2021) · cited 28× · AI/ML

**Wikidata**: [openalex:W3162263377](https://www.wikidata.org/wiki/openalex:W3162263377)  
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