# A Novel Trench IGBT With N-P-N Polysilicon Gate Structure for Low EMI Noise and High Robustness

> Research article (IEEE Transactions on Electron Devices, 2024) · cited 10× · AI/ML

**Wikidata**: [openalex:W4391935873](https://www.wikidata.org/wiki/openalex:W4391935873)  
**Source**: https://4ort.xyz/entity/a-novel-trench-igbt-with-n-p-n-polysilicon-gate-structure-for-low-emi-noise-and-high-robustness