# A low-leakage and high-writable SRAM cell with back-gate biasing in FinFET technology

> Research article (Journal of Computational Electronics, 2019) · cited 23× · AI/ML

**Wikidata**: [openalex:W2930986966](https://www.wikidata.org/wiki/openalex:W2930986966)  
**Source**: https://4ort.xyz/entity/a-low-leakage-and-high-writable-sram-cell-with-back-gate-biasing-in-finfet-technology
