# A GaN Complementary FET Inverter With Excellent Noise Margins Monolithically Integrated With Power Gate-Injection HEMTs

> Research article (IEEE Transactions on Electron Devices, 2021) · cited 69× · AI/ML

**Wikidata**: [openalex:W3215281310](https://www.wikidata.org/wiki/openalex:W3215281310)  
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