# A 2-Transistor-2-Capacitor Ferroelectric Edge Compute-in-Memory Scheme With Disturb-Free Inference and High Endurance

> Research article (IEEE Electron Device Letters, 2023) · cited 17× · AI/ML

**Wikidata**: [openalex:W4376456427](https://www.wikidata.org/wiki/openalex:W4376456427)  
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