5.5 A 2.1e− Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology
Research article (2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020) · cited 26× · AI/ML