# 5.5 A 2.1e<sup>−</sup> Temporal Noise and −105dB Parasitic Light Sensitivity Backside-Illuminated 2.3µm-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology

> Research article (2020 IEEE International Solid- State Circuits Conference - (ISSCC), 2020) · cited 26× · AI/ML

**Wikidata**: [openalex:W3015900978](https://www.wikidata.org/wiki/openalex:W3015900978)  
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